Interface Characterization and Delamination Mechanism of c-BN Film

Abstract

ABSTRACTCubic boron nitride films were prepared by helicon wave plasma CVD process on (100) Si. The growth and delamination mechanism of c-BN film was investigated with FT-IR spectroscopy and transmission electron microscopy. The film deposited under the intense impact of energetic ions is usually delaminated from the substrate after deposition. It is found that moisture in the air, surface roughness of the film and substrate, as well as severe compressive stresses in the film are the primary contributors to film delamination. An aqueous oxidation was verified by EDXS analysis, which generate local stress by volume expansion at the crack region in the c-BN layer. From the experimental results and ??? observation a model for the delamination mechanism of c-BN film is suggested. Based on the delamination mechanism, several kinds of remedies such as post annealing and post N2plasma treatment were carried out for improving the adhesion.