Author:
Li C.L.,Yu Y.H.,Chen M.,Zou S.C.,X Sh.,Lin Z.X.
Abstract
AbstractSIMOX SOI is quite attractive for IC technology because of its potential for high-speed and low power consumption. SOI wafers are required to maintain good electrical performances in the buried oxide (BOX) layers, thus it is imperative to study the electrical characteristics of the BOX layers and the interface states. C-V and I-V techniques are very frequently utilized for extracting the parameters of the Si-SiO2 interface in bulk-silicon MOS systems. In this paper, we use a new two-terminal MOSOS (metal-oxide-semiconductor-oxide-semiconductor) structure to study the electrical characteristics of SIMOX SOI wafers. Results gained from the comparison between the experimental curves and simulation curves are presented and analyzed. We show considerable improvement in comparison with results obtained using traditional methods.
Publisher
Springer Science and Business Media LLC
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