Author:
Grüger H.,Kunath C.,Kurth E.,Sorge S.,Pufe W.
Abstract
AbstractIn this paper results of the deposition and annealing of hafnium oxide thin films are reported. Due to the sensor application in mind, thicknesses between 30 and 150 nm have been deposited by r.f. sputtering of a high purity oxide target. Annealing has an important influence on the layer structure, stress and application correlated properties. A detailed understanding of the layer preparation is necessary to adjust deposition and annealing. After deposition the layers are predominately amorphous, annealing leads to textured layers with monocline or orthorhombic phases.Besides gas sensor applications optimized layers may serve as protective coating or combined with a second material to multi layer stacks as high reflective dielectric mirror.
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. Performance of polysilicon gate HfO2 MOSFETs on [100] and [111] silicon substrates
2. High quality r.f. sputtered metal oxides (Ta2O5, HfO2) and their properties after annealing
3. On the interface quality of MIS structures fabricated from Atomic Layer Depostion of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films;Duenas;Mat. Res. Soc. Symp. Proc.,2004
4. Improved structural properties of sputtered hafnium dioxide on silicon and silicon oxide for semiconductor and sensor applications
5. Silicide formation at HfO2/Si and ZrO2/Si interface induced by Ar+ ion bombardment;Lebedinskii;Mat. Res. Soc. Symp. Proc.,2004
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献