Author:
Veen A. Van,Schut H.,Hakvoort R.A.,Fedorov A.,Westerduin K.T.
Abstract
AbstractThermal helium desorption spectrometry and positron beam analysis have been used to monitor the growth of helium vacancy clusters during room temperature helium irradiation of silicon and during subsequent annealing to 1300 K. Experimental results obtained with hydrogen irradiation show that also hydrogen can be used to create cavities. There is a rather sharp threshold dose for creating cavities that will survive 1300 K annealing. It appears that positrons form a sensitive probe for the trapping and release of impurities inside the cavities. Results of atomistic calculations are used to discuss thermal stability of helium vacancy complexes. The results are related to recent impurity gettering studies based on impurity trapping at helium induced gettering centers.
Publisher
Springer Science and Business Media LLC
Cited by
18 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献