Nanocrystals and Quantum Dots Formed by High-Dose Ion Implantation-Reference-Cited by-同舟云学术

Nanocrystals and Quantum Dots Formed by High-Dose Ion Implantation

Published:1995 Issue: Volume:396 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

White C.W.,Budai J. D.,Zhu J. G.,Withrow S. P.,Hembree D. M.,Henderson D.O.,Ueda A.,Tung Y.S.,Mu R.

Abstract

AbstractIon implantation and thermal annealing have been used to produce a wide range of nanocrystals and quantum dots in amorphous (SiO2) and crystalline (AI2O3) matrices. Nanocrystals of metals (Au), elemental semiconductors (Si and Ge), and even compound semiconductors (SiGe, CdSe, CdS) have been produced. In amophous matrices, the nanocrystals are randomly oriented, but in crystalline matrices they are three dimensionally aligned. Evidence for photoluminescence and quantum confinement effects are presented.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference19 articles.

1. 19 White C. W. , Budai J. D. , Zhu J. G. , Withrow S. P. , and Aziz M. J. , submitted to Applied Physics Letters.

2. 18 White C. W. , Budai J. D. , Zhu J. G. , Withrow S. P. , Zuhr R. A. , Hembree D. M. , Henderson D. O. , Ueda A. , Tung Y. S. , and Mu R. , Journal of Applied Physics (in press).

3. Growth of Ge, Si, and SiGe nanocrystals in SiO2matrices

4. Semiconductor Nanocrystals formed in SiO2 by Ion Implantation

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