Author:
Park K.,Salamanca-Riba L.,Jonker B. T.
Abstract
ABSTRACTThe structural properties of (ZnSe/FeSe) superlattices, grown with and without a ZnSe buffer layer on (001) G a As substrates by molecular beam epitaxy, have been studied by transmission electron microscopy. High quality (ZnSe/FeSe) superlattices are obtained when grown on a ZnSe buffer layer on (001) GaAs substrates. In contrast, nominal (ZnSe/FeSe) superlattices grown directly on (001) GaAs substrates without a buffer layer showed evidence for intermixing of the layers in the superlattice indicating that the superlattice is unstable. We observed a disordered structure and an ordered structure in the resulting Zn1−xFexSe solid solution. The ordered structure corresponds to chemical ordering of Zn and Fe atoms along the < 100 > and < 110 > directions. We have studied the effect of misfit strain in the (ZnSe/FeSe) superlattices on the film quality.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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