Crystal Growth Study of Silicon and Germanium Wafers Used for Photovoltaic Devices

Abstract

AbstractTo develop the EPR material quality, electrical and structural charact erizations were executed by EBIC, LBIC, TEM, ECP and X diffraction. Two interface types were observed; some interfaces parallel and constitued by Σ3 and Σ9 twins, show low electrical activity; other are curved with no defined index and higher electrical activity. Some orientations such as (111),(220),(331) appear more frequently.