Contamination Monitoring Using Surface Photovoltage and Application to Process Line Control

Author:

Jastrzebski Lubek,Lagowski Jacek,Henley Worth,Edelman Piotr

Abstract

AbstractSurface photovoltage (SPV) measurements of lifetime and charge are used by the silicon industry for real-time, non-contact monitoring of alkalide and heavy metal contamination during IC processing. Information about contamination present at the surface or in the bulk of a silicon wafer is derived from their effects on measured electronic characterization. Identification and detection, with a sensitivity of ppq (107 cm'3), of Fe and Cr in the bulk of p-type silicon is possible via monitoring of their decomposition/pairing kinetics with boron. We will show the most important examples of the application of SPV to monitor critical IC processing steps. The allowable contamination thresholds in IC processing lines are a very strong function of technology and are different for various metals.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference18 articles.

1. 16 Semiconductor Diagnostics, Inc.'s specification for Optical Fe Activation Station option of SPV Tools.

2. 14 Lagowski J. , unpublished.

3. Method for the measurement of long minority carrier diffusion lengths exceeding wafer thickness

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Methods for Assessing Surface Cleanliness;Developments in Surface Contamination and Cleaning, Volume 12;2019

2. References;Developments in Surface Contamination and Cleaning, Volume 12;2019

3. First-principles calculations of iron-hydrogen reactions in silicon;Journal of Applied Physics;2018-06-28

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