Maskless Deposition of a Micropattern on a Wafer by Liquid Flow
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Published:1990
Issue:
Volume:202
Page:
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ISSN:0272-9172
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Container-title:MRS Proceedings
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language:en
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Short-container-title:MRS Proc.
Author:
Mil’shtein S.,Fournier C.
Abstract
ABSTRACTMetalization patterns of micron size were deposited chemically on GaAs wafers with no litography masks by means of controlled laminar flow of liquid NaOCl. Iron used for metalization was dissolved in NaOCl wafer solution. To interrupt the continuous deposition of metal on semiconductor surface, the acrylic polymer was also dissolved in the liquid. Iron deposition appears to follow given crystalographic direction <110> creating a set of parallel lines in <110> direction. Spacing between the lines and width of the metallic lines are controlled by the temperature of the process, speed of liquid flow and percentage of polymer present in the solution.
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference3 articles.
1. 2. Mil’shtein S. and Fournier C. , U.S. Patent Pending, Ser. No. 07/152, 155 2/4/88.
2. Low-pressure polishing of GaAs wafers
3. 3. Mil’shtein S. and Fournier C. , Materials Letters, will be published (1990).