Physical and Chemical Effects of Focused Ga-Ion Beam on GaAs (100)

Abstract

ABSTRACTGa droplet formation on GaAs(100) substrates milled by focused Ga ion beam is studied using scanning electron microscopy and scanning Auger microscopy. It is found that Ga droplet formation requires a threshold Ga+ dose of ∽ 1016/cm 2 and is closely correlated to the formation of Ga overlayer at the milled surface and the increase in Ga concentration by ∽ 32% in the subsurface region. The Ga droplet evolution appears to be driven by the instantaneous energy deposited continuously by the ions.