Author:
Mulato M.,Lu J. P.,Ready S. E.,Schuylenbergh K. Van,Ho J.,Lau R.,Boyce J. B.,Street R. A.
Abstract
ABSTRACTWe report studies of the image-blur effects caused by lateral cross-talk between neighboring pixels of large-area amorphous silicon (a-Si:H) image sensors. The lateral conduction is attributed to three effects: conduction along the interface between the a-Si:H film and the underlying passivation; field-dependent electron injection at the edge of the sensor; and a field enhancement of the interface conduction due to the bias applied to the address lines. We show that the cross-talk can be controlled by choice of the operating conditions and optimization of the materials.
Publisher
Springer Science and Business Media LLC
Reference9 articles.
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