Hydrogen Distributions and Model Lineshapes of ESR Signals of Dangling Bonds in a-Si:H

Abstract

ABSTRACTFor many years it has been assumed widely that hydrogen is involved in some way in the formation of light induced defects. However recently some doubt has been cast on this because of experimental evidence that there is little H near light induced dangling bonds. In this paper we present a number of model calculations comparing ESR spectra of dangling bonds with and without correlations with H positions. The above models include different distributions of H and correlations or anti correlations of nearby H. In all cases the spectra are compared to those with no correlations or clustering. Our results coupled with published experimental data strongly suggest that dangling bonds are not correlated positively with the presence of nearby H and, in fact, it appears that light induced dangling bonds are negatively correlated with nearby H.