The Determination of Optoelectronic Properties of Microcrystalline andAmorphous Silicon Films

Abstract

ABSTRACTThe study and characterization of the (opto)electronic properties of a-Si:H and µSi filmsby contactless transient photoconductivity measurements is presented. The importance ofminority carrier trapping is shown for the example of a-Si:H films prepared with different dopinglevels. It is shown that the microwave mobility determined by these measurements is a versatiletool for the characterization of the films. Examples are given by the study of µ Si filmsproduced by laser crystallization of a-Si:H films and the optimization of the substratetemperature for the Hot Wire deposition of µ Si films.