Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surfaces

Abstract

ABSTRACTThe structure of thin SiO2 films thermally grown on Si(100) and Si(111) surfaces has been characterized by using infrared internal reflection and x-ray photoelectron spectroscopy. It is found that the infrared absorption peak due to the LO phonon mode originating from the Si-O-Si stretching vibration shows a considerable red shift in the thickness range below 30A. This red shift is interpreted in terms of the compressive stress near the interface.