Study of the Homogeneity of Fe-Doped Semiinsulating InP Wafers-Reference-Cited by-同舟云学术

Study of the Homogeneity of Fe-Doped Semiinsulating InP Wafers

Published:1997 Issue: Volume:484 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Jimenez J.,Fornar R.,Curti M.,de la Puente E.,Avella M.,Sanz L. F.,Gonzalez M. A.,Alvarez A.

Abstract

AbstractThe homogeneity of semiinsulating Fe-doped InP wafers is studied using mapping techniques, Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). These techniques allow to map with a micrometric spatial resolution the distribution of electrically active levels, in particular substitutional iron levels, Fe2+ and Fe3+. The correlation between both measurements allows to obtain information about the local compensation in terms of the [Fe3++Fe2+]/[Fe2+] ratio. Samples thermally treated were studied in order to analyse the consequences of the annealing on the homogeneity.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

1. 9. Sanz L.F. , Avella M. , Jimenez J. , Gonzalez M.A. , Fornari R. ; 19th Int. Conf. on Defects in Semiconductors, Aveiro (Portugal) July 21–25, 1997. (to be published)

2. Photocurrent contrast in semi-insulating Fe-doped InP

3. Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs

4. Homogeneity of thermally annealed Fe-doped InP wafers

5. 5. Fornari R. , Frigeri C. , Weyher J.L. , Krawczyk S.K. , Kraffi F. and Mignoni G. , Proc. of 7th Semi-insulating III–V Materials Conference, Ed. Miner C. , Ford W. and Weber E. , IOP Bristol, 1993, p. 39

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