Abstract
AbstractThe theory of optical absorption due to interband transitions in direct-gap semiconductors is revisited. A new analytical expression for linear absorption coefficient in narrow-gap semiconductors is obtained by including the nonparabolic band structure due to Keldysh and Burstein-Moss shift. Numerical results are obtained for Hg1−xCdxTe for several values of x and temperature, and compared with recent experimental data. The agreement is found to be good.
Publisher
Springer Science and Business Media LLC