Author:
Brauers A.,Conrads N.,Frings G.,Schiebel U.,Powell M.J.,Glasse C.
Abstract
ABSTRACTWe present first results on the performance of flat dynamic x-ray detectors (FDXD) based on arrays of amorphous silicon thin film transistors (TFT) with charge storage capacitances and lead oxide as x-ray photoconductor. In order to increase the “active area” of every pixel, the layout of the array has been made in a multilevel arrangement, where the charge collecting electrode is separated from the underlying electronics by a thick insulating layer. This allows for a geometrical overlap of the pixel electrodes and TFTs. PbO has been chosen as the x-ray sensing material due to its very high x-ray sensitivity. The relevant detector properties of evaporated PbO layers are described along with results obtained on first FDXD devices with PbO.
Publisher
Springer Science and Business Media LLC
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