PHOTO- AND DARK CURRENT NOISE IN a-Si:H PIN DIODES AT FORWARD AND REVERSE BIAS

Abstract

ABSTRACTThe noise spectra of hydrogenated amorphous silicon pin diodes are measured in the dark and under illumination at reverse and forward bias. The noise coefficients of 1/f noise at different operating points are determined. The superposition of the different noise mechanisms is investigated. A new empirical model and a method to calculate the noise in pin diodes is suggested. Transport and noise mechanisms are discussed.