Optical Properties Of Si Nanocrystals Formed In Si02 By Ion Implantation-Reference-Cited by-同舟云学术

Optical Properties Of Si Nanocrystals Formed In Si02 By Ion Implantation

Published:1998 Issue: Volume:507 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

White C. W.,Withrow S. P.,Meldrum A.,Budai J. D.,Hembree D. M.,Zhu J. G.,Henderson D. O.,Prawerttt S.

Abstract

ABSTRACTSi nanocrystals formed in SiO2 by high-dose ion implantation and annealing give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption provides evidence for size-dependent quantum confinement in the Si nanocrystals. PL peak energies are nearly independent of dose suggesting that surface or interface states play an important role in PL. Estimates of absorption bandgaps in the nanocrystals are given.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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