Si/SiGe and III-V Integrated Circuit Technology for Next Generation High-Speed Systems: Comparisons and Tradeoffs

Author:

Larson Lawrence E.

Abstract

AbstractThis paper will summarize the technology tradeoffs that are involved in the implementation of high-speed integrated circuit technology for communications applications. The advantages of Si/SiGe and III-V technology with respect to CMOS and Si bipolar technologies are discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference30 articles.

1. [30] Hafizi M. et. al., “Ultra-fast low-power integrated circuits in a scaled submicron HBT IC technology,” 1997 Radio Frequency Integrated Circuits Symposium, pp. 64–7.

2. [29] Larson L. , et. al., “A low-cost monolithic microwave integrated circuit technology in Si/SiGe HBT technology,” Proc. 1996 IEEE Intl. Solid-state Circuits Conf. Pp. 88–89.

3. [26 ] Case M. , et. al, “A 26 GHz digital frequency divider implemented in a manufacturable Si/SiGe HBT technology,” Proc. 1995 IEEE BCTM, 1995.

4. [25] Harame D. , Meyerson B. , Larson L. , and Cunningham P. , “Epi-Base BJT vs. Epi-Base HBT, private communications,” 1995.

5. Intermodulation in heterojunction bipolar transistors

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