Real Structure and Internal Friction of Boron Doped with Zirconium

Abstract

ABSTRACTThe nature of interaction of point and linear defects in semiconductor boron doped with zirconium (∼ 1.5% at.) has been studied using electron microscope and internal friction methods. It was shown that doping with zirconium promoted the multiplication of polysynthetic twins and stacking faults. A computer simulated analysis of diffraction patterns was performed in terms of trigonal presentation. At the frequency of free torsional vibrations of ∼ 1Hz a high level of internal friction with maxima at 250, 300–320 and 380–420°C was revealed. It is supposed that the maxima are respectively due to: the twin-boundary motion accompanied by breaking of intericosahedral bonds (a); the process of ordering-disordering of atoms in the impurity atmospheres under the continuous change of the temperature and elastic fields of moving twinning dislocations in the {100} system (b); the impurity controlled twin-boundary motion in the {511} system.