Author:
Berry Alan D.,Purdy Andrew P.,Wells Richard L.,Pasterczyk James W.,Johansen James D.,Pitt Colin C.
Abstract
ABSTRACTChemical vapor deposition experiments using (Me3Si)3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi-conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from (C6F5)3GaAs(SiMe3)3 at 500°C and low pressures.
Publisher
Springer Science and Business Media LLC
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