Nitridation of Non-Isothermal Silicon Compacts

Abstract

ABSTRACTThe use of microwave heating for the processing of reaction-bonded silicon nitride offers at least two advantages over conventional heating methods. First, the reaction can be made to proceed preferentially in the interior of the reacting compact by maximizing the temperature gradient resulting from microwave heating. This helps maintain the flow of nitrogen into the compact during the later stages of the reaction, when the overall porosity is reduced. Second, the reaction rate can be controlled by changing the power, which gives better control over the processing than can be obtained using conventional heating.