Author:
García C.,Jiménez J.,Prieto A.C.,Ramos J.,Sanz L.F.
Abstract
AbstractMorphologic and structural changes induced by UV pulsed laser beams on GaAs are studied by means of surface inspection (optical interferometry) and MicroRaman spectroscopy. Crystal order and chemical composition (dopant distribution ) are shown to be changed by the ablation.
Publisher
Springer Science and Business Media LLC