Surface Dynamics of GaAs Thin Film Formation by Pulsed Laser Deposition Investigated Using RHEED

Abstract

ABSTRACTPost-growth surface dynamics of epitaxial GaAs (100) thin films grown by pulsed laser deposition (PLD) have been studied using dynamic reflection high-energy electron diffraction (RHEED) in an effort to better understand the growth mechanisms present in pulsed laser deposition. Results have indicated, as expected, that processes occurring at reduced substrate temperatures manifest themselves more slowly than at elevated temperatures. This has been shown through the analysis of static RHEED images and dynamic specular beam intensity as well as profile scans.