Dual-Chamber Plasma Deposition of a-Si:H Solar Cells at High Rates Using Disilane-Reference-Cited by-同舟云学术

Dual-Chamber Plasma Deposition of a-Si:H Solar Cells at High Rates Using Disilane

Published:1985 Issue: Volume:49 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Rajeswaran G.,Vanier P.E.,Corderman R.R.,Kampas F.J.

Abstract

AbstractThe use of a separated chamber deposition system for the fabrication of a-Si:H solar cells from disilane at high deposition rates results in a substantial improvement in short circuit current compared to that obtained from a single-chamber system. The spectral responses of cells fabricated in the dual-chamber mode are compared to those made in the single-chamber mode. The results are interpreted by assuming that the rate of removal of boron contaminants from the chamber is independent of deposition rate.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

1. 6. Okushi H. , Electrotechnical Laboratory, private communication.

2. 4. Rajeswaran G. , Vanier P.E. , Corderman R.R. , and Kampas F.J. , Mat. Res. Soc. Fall Meeting, Nov. 1984; Proc. Symp. on Plasma Synthesis and Etching of Electronic Materials (in press).

3. Modeling and experimental performance of amorphous silicon solar cells with graded boron-doped active layers

4. 7. Konagai M. , Matsushita T. , Sichanugrist P. , Takahashi K. , and Komori K. , Proc. 17th IEEE Photovoltaics Specialists Conference, Kissimmee, May 1984, 347–52.

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