Hyperthermal H Atom Reactions on D/Si(100)

Abstract

AbstractA photolytic source of H atoms is used to probe abstraction and adsorption reactions on the D/Si(100) monodeuteride surface. Surface H and D coverages are determined for H atom exposures, with incident average kinetic energies of 1.0 and 2.8 eV. the D atom depletion probability per incident H atom is 0.3±0.2 for both kinetic energies, and is likely due to abstraction. these results, together with previous studies, indicate that the rates of depletion of surface D and the uptake of H are nominally independent of H atom kinetic energy over the range of about 0.3 to nearly 3 eV.