Author:
Bittencourt A. C. R.,Marques G. E.,Gobato Y. Galvão,Vercik A.,Camps I.,Brasil M. J. S. P
Abstract
We report theoretical and experimental observation of photoexcitated hole spin selection in GaAs/GaAlAs n-i-n in resonant tunneling diodes. When subjected to magnetic and electric parallel fields, the spin splitted hole levels leads to several peak structure in the transmissivity. These experimental results are interpreted as an evidence of tunneling transport through spin polarized hole levels of non-magnetic diodes.
Publisher
Springer Science and Business Media LLC