Charge Collection Processes in a-Si:H p-i-n Detectors

Abstract

ABSTRACTCharge induced as a function of time in a-Si:H p-i-n detectors by protons having energies ranging between 5 and 12 MeV have been studied. A multiple trapping transport model is developed in order to explain the non saturation of the collected charge with bias and evidence of a bias dependent recombination process is shown. The dependence of the total induced charge (the detector efficiency) with bias can be expressed by an Onsager function with a thermalization distance of 34 Å.