Synthesis of Epitaxial Silicon Carbide Films by Laser CVD

Abstract

ABSTRACTArF exciraer laser CVD was performed to give epitaxial SiC films on the sapphire or (α-A12O3 (0001) substrate. The rate of film growth was limited by the diffusion of the supplied gases. Small amounts of the gas supply failed to produce the SiC deposition and etched the substrate. The UV light irradiation of the substrate was necessary for the photo-excitation to grow the adherent epitaxial films. Filtered UV light from a D2 lamp revealed that the light with the wavelength shorter than about 310nm was effective for the epitaxial growth. It was found to be essential to excite intermediate products or by-products in the absorbed layer on the substrate. The epitaxial SiC films on the αA12O3 gave blue photoluminescence which may be ascribed to the superstructure of 3C-type SiC crystals.