VHF-Deposited a-SiC:H Alloys for High-Bandgap Solar Cells: Combining High Voc and Reasonable Stability

Abstract

ABSTRACTThe material properties of a-SiC:H alloys deposited by VHFGD are studied, with a special emphasis on the effect of hydrogen dilution of the plasma on layer quality. By incorporating these layers into p-i-n solar cells the authors compare layer properties and cell performance. Special attention is paid to the stability of the solar cells against light soaking. Furthermore, the authors show that the insertion of a buffer layer can, also in the case of entirely a-SiC:H cells, lead to a substantial increase of Voc. A reasonable stability of these cells is maintained by an appropriate doping of the buffer layers.