Author:
Kovács B.,Horváth Zs. J.,Mojzes I.,Molnár G.,Petó G.,Andrási M.
Abstract
ABSTRACTThe electrical and interface parameters of epitaxial orthorombic, textured orthorombic, polycrystalline orthorombic, and polycrystalline hexagonal structures with different initial thickness of the evaporated Gd layer are compared. The Schottky barrier height, the ideality factor, the series resistance, the breakdown voltage, the relative interfacial layer thickness, the energy distribution spectra of interface states, and the equilibrium interface charge have been evaluated from the current-voltage and capacitance-voltage measurements. The obtained results indicate that the initial thickness of the Gd layer influences much more stronger the obtained parameters through the perfection of the epitaxial layer than the crystal structure.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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1. Schottky Contacts on Silicon;Springer Series in Electronics and Photonics;1994