Chemical vapor deposition of α – ZrP whiskers

Abstract

α–ZrP whiskers have been prepared from ZrCl4 + PCl3 + H2 + Ar gas mixtures at 1050–1250 °C using the mixed metal impurity-activated chemical vapor deposition process. The growth conditions, morphology, growth mechanism, and some properties were examined. The mixed impurities of Si + Pt and Si + Pd were very effective for the ZrP whisker growth with 8–12 mm (avg. 10 mm) long whiskers being obtained at 1300 °C for 1 h. The growth direction of the whiskers having hexagonal and square cross sections were along the c-axis and a-axis, respectively. The whiskers were very stable to an 80 min immersion in a concentrated HCl solution.