On the Formation of Thick and Multiple Layer Simox Structures and their Applications

Author:

Namavar F.,Cortesi E.,Soref R. A.,Sioshansi P.

Abstract

AbstractThis paper will address the formation of SIMOX structures with thick and multiple buried SiO2 layers by multiple oxygen implantation and growth of epitaxial Si by chemical vapor deposition (CVD). Our results indicate that SIMOX material can be produced with a buried layer of any thickness or with any number of distinct buried oxide layers and distinct silicon layers. Thick and double buried SiO2 layer material may be useful for high voltage isolation and electric field shielding.In addition, we have demonstrated optical waveguide action in SIMOX wafers. This suggests that in a double buried SiO2 layer system, three dimensional stacked integration of silicon waveguides is possible, including two level optical interconnects.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference9 articles.

1. 9. Waveguiding in Silicon-on-Insulator has also been observed experimentally by Professor Dennis G. Hall of the University of Rochester, and by Professor Bernard L. Weiss of the University of Surrey, U.K. (private communication, February 1989).

2. 8. Lorenzo J.P. and Soref R.A. . “Electro-Optical Silicon Devices,” U.S. Patent 4,787,691, issued November 29, 1988.

3. 7. Soref R.A. and Lorenzo J.P. , paper MEE-l, presented at the Integrated and Guided-Wave Optics Conference (Optical Society of America), Houston, TX, February 6, 1989.

4. 6. Lorenzo J.P. and Soref R.A. , “Method for Fabricating Low-Loss Crystalline Silicon Waveguides by Dielectric Implantation,” U.S. patent 4,789,642, issued December 6, 1988.

5. 5. Namavar F. and Cortesi E. , to be published.

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