Ion Implantation into Inp/InGaAs Heterostructures Grown by Movpe

Abstract

AbstractAnnealing of Beryllium implantations into epitaxial InP/InGaAs hetero-structures was investigated. Different ion energies were used to position the profile maximum in the InP cap, at the hetero-interface, or in the underlying InGaAs layer. By measuring the Be atom and carrier profiles, it is shown that annealing conditions necessary for optimum Be activation in the InP cap layer are compatible with good profile control for Be in InGaAs. There is a slight transfer of Be across the interface during annealing, which is important, if the pn-juntion is intended to be close to the hetero-interface.