C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

Abstract

ABSTRACTDiamond films were implanted with C+, Si+ or Sn+ ions at multiple energies in order to generate a uniform region of implantation-induced disorder. Analysis of the C+ implanted surfaces by micro-Raman spectroscopy has shown only minor increase in the proportion of nondiamond or sp2-bonded carbon at doses of 5 × 1013 - 5 × 1015 ions/cm2. In comparison, an amorphization of the structure was evident after implantation with either Si+ ions at a dose of 5 × 1015 ions/cm2 or with Sn+ ions at >5 × 1014 ions/cm2. At a given implantation dose, the etch rate of the diamond film in a CF4/O2 plasma increased with the mass of the implanted species in the order of C+, Si+ and Sn+. For a given implant species, the etch rate was directly proportional to vacancy concentration as controlled by the dose or the implantation-induced disorder.