Fluctuating Defect Density Probed with Noise Spectroscopy in Hydrogenated Amorphous Silicon

Abstract

ABSTRACTResistance fluctuations have been studied in hydrogenated amorphous silicon in the temperature range between 300 K and 450 K. The primary noise source has a power spectrum of approximately 1/f and is ascribed to hydrogen motion. Hopping of weakly bound hydrogen is thermally activated at such low temperatures with an average activation energy of 0.85 eV. The attempt rate amounts to 7 · 1012 s−1.