High Electric field effects on the Thermal Generation in Hydrogenated Amorphous Silicon

Abstract

ABSTRACTWe have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.