Author:
Mori Takahiro,Iizuka Shota,Nakayama Takashi
Abstract
AbstractThe tunnel field-effect transistor (TFET) is one of the candidates replacing conventional metal–oxide–semiconductor field-effect transistors to realize low-power-consumption large-scale integration (LSI). The most significant issue in the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material having a low band-to-band tunneling probability and is not favored for the channel. However, a new technology to enhance tunneling current in Si-TFETs utilizing the isoelectronic trap (IET) technology was recently proposed. IET technology provides a new approach to realize low-power-consumption LSIs with TFETs. The present paper reviews the state-of-the-art research and future prospects of Si-TFETs with IET technology.
Funder
Japan Society for the Promotion of Science
New Energy and Industrial Technology Development Organization
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Reference80 articles.
1. G.E. Moore: Cramming more components onto integrated circuits. Electronics 38, 114 (1965).
2. G.E. Moore: Progress in digital integrated electronics. In Technical Digest IEEE Int. Electron Devices Meeting, 1975, pp. 11–13.
3. J.G. Koomey, S. Berard, M. Sanchez, and H. Wong: Implications of historical trends in the electrical efficiency of computing. IEEE Ann. Hist. Comput. 33, 46 (2011).
4. R.H. Dennard, F.H. Gaensslen, V.L. Rideout, E. Bassous, and A.R. LeBlanc: Design of ion-implanted MOSFET’s with very small physical dimensions. IEEE J. Solid-State Circuits 9, 256 (1974).
5. Y. Taur and T.H. Ning: Fundamentals of Modern VLSI Devices, 2nd ed. (Cambridge Univ. Press, Cambridge, England, 2009), p. 175.
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