Post-Oxidation Enhanced Diffusion of Low-Energy Implanted Boron in Ultra-Shallow P+/N Junctions Formation
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Published:2000
Issue:
Volume:610
Page:
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ISSN:0272-9172
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Container-title:MRS Proceedings
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language:en
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Short-container-title:MRS Proc.
Author:
Lenoble D.,Halimaoui A.,Grouillet A.
Abstract
AbstractIn this paper, we report for the first time the effect of sacrificial oxide (sacox) on the boron diffusion in ultra-shallow P+/N junctions. It is shown that the boron diffusivity is enhanced when low energy implantations are performed through sacrificial oxide. The various experimental data lead to conclude that the Post-Oxidation Enhanced Diffusion (POED) is due to a « mirror effect » seen by the Si interstitials incoming into the sacox layer. POED occurs even for sacox as thin as 1.5 nm. From a simple model, the reflection coefficient is estimated to be about 100 % for a 2.5 nm-thick sacox.
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference8 articles.
1. [2] Lenoble D. , Josse E. , Grouillet A. , Julien C. , Skotnicki T. , Walther S. , Liebert R.B. , submitted to ESSDERC 2000, Cork, Ireland, sept. 2000
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