Laser-Induced Chemical Vapor Deposition of Ge-Se Thin Films

Abstract

ABSTRACTThe synthesis of Ge-Se deposits has been demonstrated by using continuous wave CO2laser excited reactions of GeC14and Se2Cl2precursors, each transported in an argon carrier gas. The deposited Ge-Se layers are rich in Ge with a composition of 70% of Ge and 30% of Se. Microstructural examinations reveal that the microstructure consists of amorphous Ge-Se particles ranging in diameter from 2000 Å to 7000 Å. Suggestions are made for the possible mechanisms that might occur during film deposition including, pyrolytic reactions, multiphoton dissociations, and Volmer-Weker film growth.