Theoretical and Experimental Investigation of Disordering Effects on Photoluminescence Spectra of InGaAs/InGaAsP Quantum Wells

Abstract

AbstractThe effect of disordering on photoluminescence spectra of InGaAs/InGaAsP quantum wells has been investigated experimentally and theoretically taking into account the valence band intermixing, strain, exciton effects, and the non-identical diffusion constants for group III and V materials. The disordering profile of 1.55Q InGaAs/InGaAsP quantum wells lattice matched to InP has been controlled by choice of the cap layer materials as well as the diffusion time and diffusion temperature. By comparing the experimental data and theoretical calculations, the diffusion constant for each material has been extracted.