Photoluminescence Measurements in Interband Transition in Fast Neutron Irradiated In0.07Ga0.93As/A10.4Ga0.6 As Multiple Quantum Wells

Abstract

AbstractInterband transitions in n-type InGaAs/AlGaAs multiple quantum wells were studied using a photoluminescence (PL) technique after the samples were irradiated with fast neutrons. It was observed that the PL intensity of the interband transition is reduced as the irradiation dose is increased. In Addition, the peak position energy of the interband transition was increased and then decreased as a function of irradiation dose. The results are explained in terms of electrons trapping, many-body effects, and irradiation-induced damages at the interfaces as well as in the well and barrier regions.