Author:
Arroyo Jaime Mimila,Barbé Michel,Jomard François,Ballutaud Dominique,Chevallier Jacques,Poisson Marie-Antoinette,Delage Sylvain,Dua Christian,Cordier Yvon,Hugues Maxime,Semond Fabrice,Natali Franck,Lorenzini Philippe,Massies Jean
Abstract
AbstractWe have studied the influence of a deuterium diffusion on the electrical characteristics of the 2D gas present in AlGaN/GaN heterostructures. The deuterium diffusion is performed by exposing the structures to a rf remote deuterium plasma. We find that both the sheet carrier concentration and the electron mobility decrease and that these effects are partly reversible under thermal annealing. These results suggest that deuterium behave as acceptors in the 2D gas region. The negatively charged deuterium act as additional scattering centers for electrons.
Publisher
Springer Science and Business Media LLC