Author:
Sopori Bhushan,Li Chuan,Narayanan S.,Carlson D.
Abstract
AbstractMulticrystalline Si wafers used in commercial solar cell fabrication exhibit a tendency to form large “clusters” of defects, which remain laterally separated from each other. Defect clusters are also sites of impurity precipitation. Because precipitated impurities cannot be gettered by the conventional processes used in Si solar cell fabrication, defect clusters constitute low-performing regions in the cell. They shunt the device and constitute the primary efficiency limiting mechanism in current solar cells. We show that the efficiency loss caused by defect clusters can exceed 3–4 absolute points.
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. A New Defect Etch for Polycrystalline Silicon
2. Observation of transition metals at shunt locations in multicrystalline silicon solar cells
3. 2PVSCAN uses optical scattering from a defect-etched wafer to statistically count defects. It is also fitted with capabilities to make LBIC and reflectance measurements at 0.63 μm and 0.98 μm. It is available from GT Solar Technologies, Nashua, NH 03054. Also, see Sopori B.L. , US Patent 5,581,346.
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献