Author:
Xie Qianghua,Fejes Peter,Kottke Mike,Wang Xiangdong,Canonico Mike,Theodore David,White Ted,Sadaka Mariam,Vartanian Victor,Thean Aaron,Nguyen Bich-Yen,Barr Alex,Thomas Shawn,Liu Ran
Abstract
AbstractIn this paper, various types of defects (both threading dislocation and misfit dislocations) in strained Si (sSi) have been analyzed by transmission electron microscopy (TEM). Germanium upper-diffusion has been studied by scanning transmission electron microscopy (STEM) for strained Si on SiGe/SOI. SGOI-devices processed using an optimized thermal budget show minimal Ge diffusion and minimal process related defects. Correlation between the device performance (such as leakage current and reliability) and structural information found in TEM has been established.
Publisher
Springer Science and Business Media LLC
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