Self-assembled Si/Ge quantum dot structures for novel device applications

Abstract

ABSTRACTThe band structure of self-assembled Si/Ge quantum dot structures deposited by molecular beam epitaxy in the Stranski Krastanov growth mode is characterized by optical and electrical spectroscopy. Interband and intraband absorption, photocurrent, photoluminescence, Raman and admittance spectroscopy of structures with quantum dots of about 20 nm lateral size offer insight into the discrete level scheme within the valence band, the optical transitions and the lifetime of localized hole states. The results are discussed with respect to their possible applications in infrared light detection, storage and quantum-logic devices.