Very Thick Coherently Strained GexSi1−x Layers Grown in a Narrow Temperature Window

Author:

Chern C. H.,Wang K. L.,Bai G.,Nicolet M. -A.

Abstract

ABSTRACTStrain relaxation of GexSi1−x layers is studied as a function of growth temperature. Extremely thick coherently strained layers whose thicknesses exceed more than fifty times of the critical thicknesses predicted by Matthews and Blakeslee's model were successfully grown by MBE. There exits a narrow temperature window from 310 °C to 350 °C for growing this kind of high quality thick strained layers. Below this temperature window, the layers are poor in quality as indicated from RHEED patterns. Above this window, the strain of the layers relaxes very fast accompanied with a high density of misfit dislocations as the growth temperature increases. Moreover, for samples grown in this temperature window, the strain relaxation shows a dependence of the residual gas pressure, which has never been reported before.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. SiGe/Si layers—early stages of plastic relaxation;Journal of Physics D: Applied Physics;2005-01-07

2. Misfit dislocation cross-slip at the first stages of plastic relaxation in low-mismatch heterostructures;Philosophical Magazine A;2001-01

3. Nucleation, Glide Velocity and Blocking of Misfit Dislocations in SiGe/Si;Crystal Research and Technology;1998

4. Growth of Si1-xGex Alloys by MBE;Materials Science Forum;1996-02

5. SiGe band engineering for MOS, CMOS and quantum effect devices;Journal of Materials Science: Materials in Electronics;1995-10

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