Intersubband Absorption in the Conduction Band of Si/Si1−xGex Multiple Quantum Wells-Reference-Cited by-同舟云学术

Intersubband Absorption in the Conduction Band of Si/Si1−xGex Multiple Quantum Wells

Published:1991 Issue: Volume:220 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Hertle H.,Schuberth G.,Gornik E.,Abscreiter G.,Schäffler F.

Abstract

ABSTRACTThe intersubband absorption of electrons in modulation doped Si/Si1−xGex multiple quantum wells has been observed [1]. Various samples with different well widths and carrier densities have been studied. Narrow absorption lines are observed in waveguide geometry. Self consistent subband calculations are in good agreement with the experimental values.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

1. Doping by Secondary Implantation

2. An Industrial Single‐Slice Si‐MBE Apparatus

3. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices

4. [1] An extended version of this work has been submitted for publication to Appl. Phys. Letters.

5. Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium

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