In-Situ SubStrate Temperature Measurement During a-Sin Plasma CVD from N2 Rotational Temperature

Abstract

AbstractRotational temperature (Tr) of nitrogen molecule, equivalent to the gas temperature (Tg), was used for monitoring silicon nitride (SiN) surface temperature during rf glow discharge processing. SiN film characteristics such as deposition rate and etching rate for mixture of hydro-fluoric acid (HF) and ammonium fluoride : (NH4F) were dependent on Tr near the substrate. The Tr increased not only with substrate temperature setting (To) but also with gas mixing ratio of H2/(H2+N2) due to improvement of thermal conductance from heater to substrate in the process chamber.